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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 9.1 i d @ v gs = 12v, t c = 100c continuous drain current 5.7 i dm pulsed drain current 36.4 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 23 mj i ar avalanche current 9.1 a e ar repetitive avalanche energy 2.5 mj dv/dt peak diode recovery dv/dt 4.8 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in/1.6mm from case for 10s) weight 0.98 (typical) g c a www.irf.com 1 technology product summary part number radiation level r ds(on) i d IRHF67230 100k rads (si) 0.145 ? 9.1a irhf63230 300k rads (si) 0.145 ? 9.1a for footnotes refer to the last page pre-irradiation radiation hardened IRHF67230 power mosfet 200v, n-channel thru-hole (to-39) t0-39 international rectifier?s r6 tm technology provides superior power mosfets for space applications. these devices have improved immunity to single event effect (see) and have been characterized for useful performance with linear energy transfer (let) up to 90mev/(mg/cm 2 ). their combination of very low r ds(on) and faster switching times reduces power loss and increases power density in today?s high speed switching applications such as dc-dc converters and motor controllers. these devices retain all of the well established advantages of mosfets such as voltage control, ease of paralleling and temperature stability of electrical parameters. features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package light weight pd-97311 free datasheet http://
IRHF67230 pr e-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 9.1 i sm pulse source current (body diode) ? ? 36.4 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 9.1a, v gs = 0v t rr reverse recovery time ? ? 317 ns t j = 25c, i f = 9.1a, di/dt 100a/ s q rr reverse recovery charge ? ? 2.91 cv dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 5.0 c/w note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.22 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.145 ? v gs = 12v, i d = 5.7a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma ? v gs(th) / ? t j gate threshold voltage coefficient ? -9.6 ? mv/c g fs forward transconductance 5.0 ? ? s v ds = 15v, i ds = 5.7a i dss zero gate voltage drain current ? ? 10 v ds = 160v ,v gs =0v ??25 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 45 v gs = 12v, i d = 9.1a q gs gate-to-source charge ? ? 12 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 30 t d (on) turn-on delay time ? ? 17 v dd = 100v, i d = 9.1a, t r rise time ? ? 30 v gs = 12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 40 t f fall time ? ? 25 l s + l d total inductance ? 7.0 ? ciss input capacitance ? 1374 ? v gs = 0v, v ds = 25v c oss output capacitance ? 214 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 4.2 ? na nh ns a measured from drain lead (6mm/0.25in from package)to source lead (6mm/0.25in from package)with source wire interanally bonded from source pin to drain pad r g gate resistance 1.1 ? f = 1.0mhz, open drain free datasheet http://
www.irf.com 3 pre-irradiation IRHF67230 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil- ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. typical single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter upto 300k rads(si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 200 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 1.0 a v ds = 200v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-39) ? 0.145 ? v gs = 12v, i d = 5.7a v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 9.1a 1. part numbers IRHF67230, irhf63230 table 2. typical single event effect safe operating area let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs= @vgs= @vgs= @vgs= 0v -5v -10v -15v 42 5% 2450 5% 205 5% 200 200 200 190 61 5% 825 5% 66 7.5% 200 200 200 190 90 5% 1470 5% 80 5% 170 170 - - 0 50 100 150 200 250 -15 -10 -5 0 bias vgs (v) bias vds (v) let=42 5% let=61 5% let=90 5% free datasheet http://
IRHF67230 pr e-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 2345678910 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj =150c 5.0v vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 12v i d = 9.1a free datasheet http://
www.irf.com 5 pre-irradiation IRHF67230 fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma 0 10 20 30 40 i d , drain current (a) 100 200 300 400 500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 150c v gs = 12v 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 100 150 200 250 300 350 400 450 500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 9.1a t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 200 210 220 230 240 250 260 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma free datasheet http://
IRHF67230 pr e-irradiation 6 www.irf.com fig 12. maximum drain current vs. case temperature fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage fig 11. typical source-drain diode forward voltage 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 v sd , source-to-drain voltage (v) 0.1 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 i d , d r a i n c u r r e n t ( a ) 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 2400 2800 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 q g, total gate charge (nc) 0 2 4 6 8 10 12 14 16 18 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 9.1a for test circuit see figure 17 free datasheet http://
www.irf.com 7 pre-irradiation IRHF67230 fig 15. maximum effective transient thermal impedance, junction-to-case fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.10a 5.76a bottom 4.07a 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by rds(on) 100s dc free datasheet http://
IRHF67230 pr e-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
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0.1 % + - free datasheet http://
www.irf.com 9 pre-irradiation IRHF67230 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l = 0.56mh peak i l = 9.1a, v gs = 12v i sd 9.1a, di/dt 347a/ s, v dd 200v, t j 150c footnotes: case outline and dimensions ? to-205af (modified to-39) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 09/2011 legend 1 - source 2 - gate 3 - drain free datasheet http://

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